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We produce plasma source by using of discharge by 13.56MHz radio frequency or/and
2.45GHz Microwave power without electrode. Some Plasma source is available for ion and/or
radical source.
13.56MHz Radio frequency discharge type
IRFS-500 RF radical source
This is used for doping , cleaning. This radical source is Inductive
coupling 13.56MHz radio frequency discharge plasma type. This type does not use magnet, so
can use with RHEED system. IRFS-500 is RF Power 500W with Auto tuning system.
 | Characteristics
 | The plasma can be observed by the viewing port behind. |
| This is can be in install high vacuum system by all metal seal. |
| This source can be installed in the cell port in MBE. |
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| Specifications
| RF Output Power 0-500W at 13.56MHz |
| Auto tuning available. |
| 200 degree of centigrade bakable. |
| Gas inlet port ICF34 |
| Install flange ICF114 |
| Power AC 200 V 1.5 kVA, Cooling water is needed(500 cc / min) |
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| Parts List RF radical source, RF Power supply, RF Matching box with Auto tuning.
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| Accessory |
Gas Mass Flow controller, Optical Plasma monitor
2.45GHz Microwave discharge type
SMPS-101 Miniture Microwave Plasma Source
| Specifications
| Microwave Power 0-100W at 2.45GHz |
| Gas inlet port VCR 1/4 |
| Install flange ICF70 or VCR 1/4 |
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EMRS-221 Plasma Source for radical (output dia. 1 inch)
EMIS-212 Plasma Source for ion beam (output dia. 2 inch)
External plasma source
These plasma source can use for ion beam source which accelerate voltage is to 3 keV.
This source can be install to ICF-114 flange. High vacuum is available with all metal
seal.
| Characteristics
| The plasma can be observed. |
| This is can be in install high vacuum system by all metal seal. |
| application : High quality oxide layer, etc |
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| Specifications
| Microwave Power 0-200W at 2.45GHz |
| 200 degree of centigrade bakable. (without magnet) |
| Gas inlet port ICF34 |
| Install flange ICF114 |
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IMIS201Q Internal Microwave Plasma Source
EMIS201Q is the microwave plasma source to insert into the chamber. Insert
length is from 150 mm to 300 mm.
| Characteristics
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| Specifications
| Microwave Power 0-200W at 2.45GHz |
| 200 degree of centigrade bakable without magnet. (The magnet must be removed. A magnet
is arranged on the side of the atmosphere.) |
| Gas inlet port ICF34 x2, and Axially port x1 |
| Install flange ICF114 |
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Optional Component
| Acceleration power supply |
| Acceleration Electrode and lens |
| Mass flow system for ion source gas
etc ... |
EMIS-401 Ion Radical source
This source can be install ICF-203 flange. High vacuum is available with
all metal seal too.
| Characteristics
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| Specifications
| Microwave Power 0-500W at 2.45GHz |
| 200 degree of centigrade bakable without magnet. |
| Gas inlet port ICF34 |
| Install flange ICF152 |
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FMP500 Flat Plasma source
- Large diameter (4"-8") micro wave discharged plasma source use for doping,
cleaning. This plasma source has unique mechanism, and very light in weight.
| Specifications
| Microwave Power 0-600W at 2.45GHz |
| Plasma source diameter 150mm or more |
| Uniformity 3% (by Sio2 etching) |
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Simple schematic of FMP500
FMP500 introduces a microwave from the perimeter and magnetic field from the top surface.
With this structure, FMP500 can get the stable and clean plasma at long time. The ignition
is easy. Wide range of gas pressure, from 3 Pa to 10-2 Pa.
Plasma view from Chamber
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ARIOS INC.
